Superlattice imaging device

Details Superlattice imaging device Superlattice imaging device

1988-08-18

1990-06-12

James, Andrew J.

357 4, 357 20, 357 34, 357 58, H01L 2714

Patent

active

049337319

ABSTRACT:
A semiconductor imaging element for generating an electrical signal representing the intensity of incident light includes an avalanche photodiode, having sequential p-type, intrinsic, and n-type layers, with a compositional superlattice as the intrinsic layer, for converting incident light to an electric signal, and a switch electrically connected to the photodiode for receiving and reading out the signal. The photodiode and switch are disposed at least partially overlying each other on the same substrate. A two-dimensional array of the imaging element can be used to generate an electrical signal representing a two-dimensional picture of a material object.

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