Semiconductor device having a high breakdown voltage characteris

Details Semiconductor device having a high breakdown voltage characteris Semiconductor device having a high breakdown voltage characteris

1989-04-24

1990-06-12

Mintel, William

357 238, 357 2312, 357 41, 357 90, H01L 2978

Patent

active

049337300

ABSTRACT:
A metal insulator semiconductor device having a high breakdown voltage characteristic and a fabricating method thereof. The device comprises a depletion region and an enhancement region formed in a semiconductor substrate under a gate electrode. The depletion region is formed adjacent to an offset region formed around a drain region. The enhancement type channel region is formed between the depletion region and a source region is as to have an extremely short channel length. The enhancement type channel region has a first type impurity concentration that is higher than that of the semiconductor substrate. The depletion region has a second type of impurity concentration that is opposite to the first type and lower than that of the offset region in order to increase the breakdown voltage at the drain region. The short channel length is formed by applying a diffusion self-aligning method.

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Ohkura et al., "Fully Ion Implanted DSA MOS IC", Jap. Jour. of Appl. Physics, vol. 16 (1977), Supp. 16-1, pp. 167-171.
IEEE International Electron Devices Meeting, "Parasitic Effect-Free, High Voltage MOS ICS with Shield Source Structure", pp. 254-257, by H. Sakuma, T. Suzuki and M. Saito.

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