Process for recrystallization of thin strip material

Metal founding – Process – Shaping liquid metal against a forming surface

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164467, 1641222, 156DIG88, B22C 2702, C22B 902

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active

043568610

ABSTRACT:
A process for recrystallization of thin strip material includes a device for electromagnetically melting the thin strip material to provide a molten surface layer and a substantially solid core. Apparatus provides relative movement between the thin strip and the device for electromagnetically melting. Also, an apparatus resolidifies the molten surface layer to provide a preferred crystal structure in the thin strip material.

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patent: 3773499 (1973-11-01), Melnikov
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National Technical Information Service Report PB-248963, "Scale-Up of Program on Continuous Silicon Solar Cells" by A. D. Morrison, Sep. 1975.
"The Role of Surface Tension in Pulling Single Crystals of Controlled Dimensions" by G. K. Gaule et al. from Metallurgy of Elemental and Compound Semiconductors, published by Interscience Publishers, Inc., New York in 1961, pp. 210-226.
An Introduction to Semiconductors by W. Crawford Dunlap, Jr., published by John Wiley & Sons in 1957.
Zone Melting by William G. Pfann, published in 1958 by John Wiley & Sons, Inc."Laser Growth of Silicon Ribbon" by Gurtler and Baghdadi from Laser Applications in Material Processing, published by the Society of Photo-optical Instrumentation Engineers, Bellingham, Washington in 1980, pp. 128-132.

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