Fishing – trapping – and vermin destroying
Patent
1989-10-06
1991-07-09
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437162, 437193, 437 50, H01L 21225, H01L 21335
Patent
active
050305840
ABSTRACT:
A method of fabricating an MOS semiconductor device having the improved current-flowing characteristics with ease is disclosed. The method is featured as follows. First, a gate electrode covered by an insulator is formed on a gage insulating film on a semiconductor substrate, portions of the gate insulating film, above source and drain formation areas are removed and polycrystalline silicon layer doped with an impurity of the opposite type so that of the semiconductor substrate is selectively formed on the source and drain formation regions. Then, the impurity of the polycrystalline silicon is thermally diffused into the source and drain and formation region thereby to form shallow source and drain regions. Then, source and drain electrodes contacting with parts of the polycrystalline silicon.
REFERENCES:
patent: 4063967 (1977-12-01), Graul et al.
patent: 4296426 (1981-10-01), Gilles
patent: 4367580 (1983-01-01), Guterman
patent: 4433468 (1984-02-01), Kawamata
patent: 4808555 (1989-02-01), Mauntel et al.
Hearn Brian E.
NEC Corporation
Quach T. N.
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