Method for producing a silicon carbide semiconductor device

Details Method for producing a silicon carbide semiconductor device Method for producing a silicon carbide semiconductor device

1990-08-23

1991-07-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437100, H01L 2172

Patent

active

050305808

ABSTRACT:
A method for producing a silicon carbide semiconductor device having at least one of the p-type conductive layer and the n-type conductive layer is disclosed which includes the steps of: forming a silicon carbide single-crystal layer on a semiconductor substrate or semiconductor bulk single crystal; and implanting the III group of V group element ions in combination with fluorine ions in the silicon carbide single-crystal layer to form a p-type or n-type conductive layer, respectively.

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patent: 4956698 (1990-09-01), Wang
Peter Wright et al.. Hot-Electron Immunity of SiO.sub.2 Dielectric with Fluorine Incorporation, Aug. 1989, p. 347.

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