Fishing – trapping – and vermin destroying
Patent
1989-04-04
1991-07-09
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 44, 437 28, 437 29, 437 45, 437931, H01L 21265
Patent
active
050305794
ABSTRACT:
Semiconductor processing techniques and devices are provided using a partially opaque ion implantation mask to control the profile of active layers in microwave and millimeter wave monolithic integrated circuits. An N+ layer can be implanted before or after active layer formation. Selection of mask thickness enables control of active channel depth. Adjustment of gate to drain separation in MMIC FETs is also enabled, to control gate to drain voltage. Source to gate series resistance is also controlled. Multiple dielectric layers afford variable mask thicknesses to enable simultaneous formation of differing power level devices monolithically in the same substrate, including low noise high speed devices and power devices. The process and device structure provides enhanced yield, performance, uniformity and reliability.
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Eaton Corporation
Hearn Brian E.
Hugo Gordon V.
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