Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1990-05-21
1991-07-09
Morgenstern, Norman
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 451, 118723, 118724, 118728, C23C 1650, C23C 1624
Patent
active
050304763
ABSTRACT:
A process for forming a functional deposited film which is adapted for use in an apparatus which comprises a substantially enclosed reaction chamber, a plurality of cylindrical substrates arranged to surround a discharge space and a microwave introduction means provided at least at one end of each cylindrical substrate and wherein microwave energy is introduced so that a glow discharge plasma containing reactant gases derived from starting gases is formed in the discharge space thereby forming a deposited film on each cylindrical substrate is described. The process is characterized in that a temperature control means is provided in the inside of each of said plurality of cylindrical substrates and simultaneous with the introduction of a thermally conductive gas, the thermally conductive gas is exhausted from the one end of each cylindrical substrate in the vicinity of the microwave introduction means. The process enables the deposited film of good quality to be formed stably at high speed and the deposited film is useful as an element member for semiconductive devices, photosensitive devices for electrophotography, photovoltaic devices, other electronic elements and optical elements.
Okamura Ryuji
Otoshi Hirokazu
Takei Tetsuya
Bueker Margaret
Canon Kabushiki Kaisha
Morgenstern Norman
LandOfFree
Process and apparatus for the formation of a functional deposite does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process and apparatus for the formation of a functional deposite, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and apparatus for the formation of a functional deposite will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-617240