Insulated gate type field effect transistor having a silicon gat

Details Insulated gate type field effect transistor having a silicon gat Insulated gate type field effect transistor having a silicon gat

1983-08-15

1985-12-10

Edlow, Martin H.

357 235, 357 59, H01L 2904, H01L 2978

Patent

active

045583382

ABSTRACT:
The present invention relates to cross-sectional shape of a silicon gate electrode of an insulated gate field effect transistor. The gate electrode is composed of polycrystalline silicon, and its length, in cross section, gradually increases from the surface contacting to the gate insulating film toward the central portion thereof and then gradually decreases toward the upper surface thereof. The central portion of the polycrystalline silicon has the largest length in the source-drain direction and contains small amount of SiO.sub.2 particles. Relying upon this gate shape, the portion having largest length, can be used as a mask to introduce impurities in a self-aligned manner to form source and drain regions. The thus formed source and drain regions create small capacity relative to the gate electrode. Therefore, a high speed transistor is realized.

REFERENCES:
patent: 4198250 (1980-04-01), Jecmen
patent: 4371890 (1983-02-01), Anagnostopoulos
patent: 4380773 (1983-04-01), Goodman

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