Multi-channel power JFET with buried field shaping regions

Details Multi-channel power JFET with buried field shaping regions Multi-channel power JFET with buried field shaping regions

1986-04-04

1987-06-02

Clawson, Jr., Joseph E.

357 20, 357 41, 357 52, 357 55, 357 86, H01L 2980

Patent

active

046707646

ABSTRACT:
A power JFET (2) has a stack (4) of alternating conductivity type layers (5-9) forming a plurality of channels (6, 8). The JFET has an ON state conducting bidirectional current horizontally through the channels. The channels are stacked vertically, and the JFET has an OFF state blocking current flow through the channels due to vertical depletion pinch-off. Various main and gate terminal and drift region structures are disclosed.

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"Simultaneous Modulation of Electron and Hole Conductivity in a New Periodic GaAs Doping Multilayer Structure", K. Ploog et al, Applied Physics Letters, vol. 38, No. 11, Jun. 1981, pp. 870-873, New York.

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