Thin film field effect transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 2, 357 15, 357 59, 357 45, 357 232, 357 237, H01L 2712, H01L 4500

Patent

active

046707638

ABSTRACT:
There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.

REFERENCES:
patent: 3304469 (1967-02-01), Weimer
patent: 3385731 (1968-05-01), Weimer
patent: 3532562 (1970-10-01), Clawson
patent: 4065781 (1977-12-01), Gutknecht
patent: 4183033 (1980-01-01), Rees
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4336550 (1982-01-01), Medwin
patent: 4343082 (1982-08-01), Lepselter
patent: 4409605 (1983-10-01), Ovshinsky
patent: 4485389 (1984-11-01), Ovshinsky
Ymasaki et al, SID 82 Digest, pp. 48-49, 1982.
Levinson et al, J. Appl. Phys., 53(2), Feb. 1982, pp. 1193-1202.
Matsui, Journ. of Appl. Phys., 55(6), Mar. 1984, pp. 1590-1595.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film field effect transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-616782

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.