Stacked semiconductor device with sloping sides

Details Stacked semiconductor device with sloping sides Stacked semiconductor device with sloping sides

1982-09-28

1985-02-19

James, Andrew J.

357 40, 357 41, 357 55, 357 56, H01L 2348

Patent

active

045009058

ABSTRACT:
Provided is a stacked semiconductor device wherein a plurality of semiconductor layers integrated with semiconductor elements are stacked with an insulating layer interposed between two adjacent of said semiconductor layers. This semiconductor device has one or more inclined faces extending over two or more of said semiconductor layers. These inclined faces are formed thereon with an interconnection layer or semiconductor element for effecting the transmission and reception of signals between circuits, having said semiconductor elements, formed in the different semiconductor layers, through another insulating layer.

REFERENCES:
patent: 3447235 (1969-06-01), Rosvold et al.
patent: 4046594 (1977-09-01), Tarvi et al.
patent: 4290077 (1981-09-01), Ronen
Goeloe et al., "Vertical Single-Gate CMOS Inverters on Laser-Processed Multilayer Substrates," Lincoln Lab., Mass. Inst. of Tech., Lexington, Mass., 1981, pp. 554-556.
Bodendorf et al., "Active Silicon Chip Carrier," IBM Technical Disclosure Bulletin, vol. 15, No. 2, Jul. 1972, p. 656.

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