Patent
1981-06-25
1985-02-19
Clawson, Jr., Joseph E.
357 13, 357 51, 357 86, H01L 2974
Patent
active
045009015
ABSTRACT:
A thyristor with an amplifying gate including a silicon semiconductor body having n.sup.+ conductive main and auxiliary emitters at the cathode side, wherein a p.sup.+ zone is formed in a region of the p control base zone adjacent the surface of the semiconductor body between the auxiliary emitter zone and the main emitter zone. The p.sup.+ zone contacts the edge region of the main emitter zone which faces the auxiliary emitter zone, and preferably projects into the edge region, and forms a p.sup.+ n.sup.+ junction with the main emitter zone. Also, the p.sup.+ zone is laterally spaced from and does not contact the n.sup.+ auxiliary emitter zone.
REFERENCES:
patent: 3337782 (1967-08-01), Todaro, Jr.
patent: 3577046 (1971-05-01), Moyson
patent: 3671821 (1972-06-01), Nakata et al.
patent: 4053921 (1977-10-01), Jaecklin et al.
patent: 4223332 (1980-09-01), Sittig
Hartman, "Improvement of Thyristor Turn-on by Calculation of the Gate Cathode Characteristic before Injection," IEEE Transactions on Electron Devices, vol. ED-23, No. 8, Aug. 1976, pp. 912-917.
Kokosa et al., "Design Criteria for Amplifying Gates in Triode Thyristers," Technical Digest 1974 International Elect. Devices Meeting, Dec. 9-11, 1974, Washington, D.C. IEEE (New York) 1974 pp. 431-434.
Pikorz Wolfgang
Sommer Karl H.
Sonntag Alois
Clawson Jr. Joseph E.
LICENTIA Patent-Verwaltungs-G.m.b.H.
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