Multiple high electron mobility transistor structures without in

Details Multiple high electron mobility transistor structures without in Multiple high electron mobility transistor structures without in

1984-05-30

1985-12-10

Edlow, Martin H.

357 16, H01L 2980, H01L 29205

Patent

active

045583374

ABSTRACT:
A multiple high electron mobility transistor structure without inverted heterojunctions is disclosed. Multiple normal heterojunctions of doped aluminum gallium arsenide grown on gallium arsenide without alternating inverted heterojunctions of gallium arsenide grown on doped aluminum gallium arsenide is achieved by grading undoped aluminum gallium arsenide from the doped aluminum gallium arsenide to the gallium arsenide to avoid an inverted heterojunction.

REFERENCES:
patent: 3322575 (1967-05-01), Ruehrwein
patent: 3748480 (1973-07-01), Coleman
patent: 4455564 (1984-06-01), Delagebeaudeuf et al.
1983 IEEE IEDM Late News Paper #5.8 Dec. 5, 1983 Luryi et al, "Unipolar Transistor Based on Charge Injection".-

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