Process for forming functional zinc oxide films using alkyl zinc

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 50, 118119, B05D 302

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active

050027964

ABSTRACT:
A functional zinc oxide deposited thin film having high light permeability and low resistivity can be obtained at a low temperature of about 200.degree. C. on an inexpensive substrate such as glass by a method of activating a starting material gas by means of activation energy, in a space different from a film-forming space thereby forming a precursor contributing to the formation of a deposited film, activating a starting material gas in a space different from the film-forming space and the space just-mentioned above by means of activation energy thereby forming an active species that chemically reacts with the precursor, and introducing the precursor and the active species into the film-forming space, thereby depositing a film, wherein the starting material gas for forming the precursor is an alkyl zinc compound and the starting material for forming the active species is an oxygen gas or an ozone gas. This enables mass production of photovoltaic devices at high efficiency using a PN junction or PIN junction or high performance flat display device using liquid crystals, by which practical provision of power sources for domestic equipments or power sources for electric power appliance or large area display device can be obtained at a reduced cost.

REFERENCES:
patent: 4826778 (1989-05-01), Ishihara
patent: 4853251 (1989-08-01), Ishihara

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