Semiconductor light emitting diode with high operating speed

Details Semiconductor light emitting diode with high operating speed Semiconductor light emitting diode with high operating speed

1985-07-24

1987-06-02

Moore, David K.

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

313506, 357 17, H01L 3300

Patent

active

046706895

ABSTRACT:
A semiconductor light emitting device comprises a laminated semiconductive structure including a substrate, an active layer thereon and a second layer adjacent the active layer remote from the substrate, the second layer having an inner region of high carrier concentration and an outer region of lower carrier concentration. An insulative layer is on the second layer, the insulative layer having a window coaxial with and larger than the inner region. A first electrode deposited on the insulative layer establishes an ohmic contact with the inner region of the second layer and a Schottky-barrier contact with the outer region. A second electrode is provided on the substrate opposite to the first electrode, the second electrode having a window for allowing light to leave therethrough.

REFERENCES:
patent: 3667117 (1972-06-01), Kunz
patent: 4342944 (1982-08-01), Thorpe

Affiliated with

Also associated with

Rating

Semiconductor light emitting diode with high operating speed does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting diode with high operating speed, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting diode with high operating speed will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-616013