MBE Growth technique for matching superlattices grown on GaAs su

Details MBE Growth technique for matching superlattices grown on GaAs su MBE Growth technique for matching superlattices grown on GaAs su

1984-03-02

1985-12-10

Edlow, Martin H.

357 16, 357 17, 357 30, 357 88, H01L 2712

Patent

active

045583366

ABSTRACT:
Misfit dislocation density at an InAs-GaAs interface is reduced in both InAs-GaSb and In.sub.1-x Ga.sub.x As-GaSb.sub.1-y As.sub.y superlattices grown on GaAs substrates by means of an MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki
patent: 4088515 (1975-04-01), Blakeslee
patent: 4319259 (1982-03-01), Oshima
patent: 4370510 (1983-01-01), Stirn
Chang et al., Appl. Phys. Lett., vol. 31, No. 11, Dec. 1, 1977, pp. 759 et. eq.

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