Electron beam exposing method

Details Electron beam exposing method Electron beam exposing method

1982-08-25

1985-02-19

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250358, 430296, A61K 2702

Patent

active

045007896

ABSTRACT:
When an electron beam is projected onto a desired pattern region, the acceleration voltage of the electron beam is set at a value at which the distribution of the scattered electrons in a predetermined region is substantially uniform. The exposure dosage is determined according to the ratio between the total area of the patterns to which the electron beam is projected in the predetermined region and the area of the predetermined region. The exposure time of the electron beam is determined in dependence upon a dose amount and the electron beam current. The exposure time of the electron beam is changed when pattern data is changed and a correction factor is calculated accordingly.

REFERENCES:
patent: 4169230 (1979-09-01), Bohlen et al.
patent: 4264711 (1981-04-01), Greeneich
patent: 4295048 (1981-10-01), Cleland et al.

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