Preparation of lower alkyl polysilsesquioxane and formation of i

Details Preparation of lower alkyl polysilsesquioxane and formation of i Preparation of lower alkyl polysilsesquioxane and formation of i

Filed on

1985-10-23

Date issued

1987-06-02

Examiner

Marquis, Melvyn I.

Patent Class

Coating processes

SubClass

Electrical product produced

SubSubClass

Integrated circuit, printed circuit, or circuit board

Other Related Categories

528 12, 525474, B05D 512

Type

Patent

Status

active

Patent number

046702997

Description

ABSTRACT:
A lower alkyl polysilsesquioxane having a general formula ##STR1## wherein R is CH.sub.3 or C.sub.2 H.sub.5, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20.degree. C. to -50.degree. C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20.degree. C. to -50.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60.degree. C. to 100.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa.
Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula ##STR2## wherein R is an alkyl or phenyl group, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.

REFERENCES:
patent: 4349609 (1982-09-01), Takeda et al.

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