Semiconductor controlled rectifier device with small area dV/dt

Details Semiconductor controlled rectifier device with small area dV/dt Semiconductor controlled rectifier device with small area dV/dt

1979-08-22

1980-12-16

Clawson, Jr., Joseph E.

357 13, 357 20, 357 86, H01L 2974

Patent

active

042400910

ABSTRACT:
A main thyristor region is formed which comprises four continuous layers of alternately different conductivities consisting of first, second, third and fourth layers, PNPN for example. The main thyristor region constitutes a main thyristor section together with a couple of main electrodes in ohmic contact with the outside ones of the four layers. A pilot thyristor section and an auxiliary pilot thyristor section are constituted by employing the first, second and third layers of the main thyristor section and the main electrode in ohmic contact with the outside of the first layer and further by introducing fifth and sixth layers for forming PH junctions with the third layer. Further, there are provided a gate means for turning on the pilot thyristor section and an auxiliary gate means being in contact with the fifth or sixth layer. The auxiliary pilot thyristor section, main thyristor section and pilot thyristor section are formed in such a way that the respective triggering voltages satisfy the following relation:

REFERENCES:
patent: 4012761 (1977-03-01), Ferro et al.
patent: 4060825 (1977-11-01), Schlegel
patent: 4176371 (1979-11-01), Schlegel

Affiliated with

Also associated with

Rating

Semiconductor controlled rectifier device with small area dV/dt does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor controlled rectifier device with small area dV/dt , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor controlled rectifier device with small area dV/dt will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-610923