Linearized charge transfer devices

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307221D, 357 89, H01L 2978, G11C 1928

Patent

active

042400899

ABSTRACT:
In surface charge transfer devices a surface adjacent semiconductor layer of high resistivity and an underlying semiconductor layer of substantially lower resistivity are provided. The devices are operated to maintain depletion in the surface adjacent layer at least to the interface between the two layers to maintain substantially constant depletion depth and thereby provide substantially linear response.

REFERENCES:
patent: 3623132 (1971-11-01), Green
patent: 3660697 (1972-05-01), Berglund et al.
patent: 3693055 (1972-09-01), Beneking
patent: 3801883 (1974-04-01), Tiemann
patent: 3858232 (1974-12-01), Boyle et al.
patent: 3969636 (1976-07-01), Baertsch et al.
patent: 4032948 (1977-06-01), Engeler et al.
patent: 4047216 (1977-09-01), French
patent: 4110777 (1978-08-01), Esser et al.

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