Sense amplifier

Details Sense amplifier Sense amplifier

1984-07-02

1985-12-10

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307279, 365205, H03K 524, H03K 3356, G01R 19165, G11C 1106

Patent

active

045582416

ABSTRACT:
A flip-flop type sense amplifier for a semiconductor memory device is disclosed, the sense amplifier comprising a pair of CMOS inverters cross-coupled with each other to form a CMOS flip-flop circuit having a pair of buffer circuits, for receiving the read-out voltage signals from multi-level memory cells and a predetermined reference voltage, respectively, and a pair of switching circuits for inverting a power source voltage across the flip-flop circuit through common sources of the flip-flop circuit, in response to the transition between a stand-by sequence and a latching operating. The common source of the p-channel transistors of the CMOS flip-flop circuit is connected to a negative potential source, and the common source of the n-channel transistors is connected to a positive potential source during a stand-by sequence, and vice versa, during a latching operation. This unique potential supply method enhances operational speed of the sense amplifier. In a multi-level memory device, a plurality of the sense amplifiers are connected in parallel for the discrimination of the read-out signals changing in a range of a few volts.

REFERENCES:
patent: 3879621 (1975-04-01), Cavaliere et al.
patent: 4007381 (1977-02-01), Mohsen
patent: 4169233 (1979-09-01), Haraszti
patent: 4223394 (1980-09-01), Pathak et al.
patent: 4287570 (1981-09-01), Stark
patent: 4376987 (1983-03-01), Hsia
patent: 4412143 (1983-10-01), Patella et al.
patent: 4461965 (1984-07-01), Chin
patent: 4485317 (1984-11-01), Davies, Jr.

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