Semiconductor devices

Details Semiconductor devices Semiconductor devices

1987-02-12

1988-08-16

Edlow, Martin H.

357 231, 357 234, 357 2314, 357 238, H01L 2978

Patent

active

047648023

ABSTRACT:
A semiconductor device comprises a drain region, base regions, gate electrodes formed over the drain region between two adjacent base regions through an insulating layer such that each bridges the surface of the drain region to partially cover the two adjacent base regions, source regions provided in the base regions, a source electrode provided on the source regions, and a metal gate electrode wiring contacting the gate electrodes. The metal gate electrode wiring includes closed loop portions and the source electrode is divided into branch sections, each corresponding to the closed loop portion.

REFERENCES:
patent: 4288803 (1981-09-01), Ronen
patent: 4359754 (1982-11-01), Hayakawa et al.
patent: 4399449 (1983-08-01), Herman et al.
patent: 4680604 (1987-07-01), Nakagawa et al.
Chang et al., "25 AMP 500 Volt Insulated Gate Transistors", IEDM pp. 83-86, 1983.

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