Molecular beam epitaxy apparatus for handling phosphorus

Details Molecular beam epitaxy apparatus for handling phosphorus Molecular beam epitaxy apparatus for handling phosphorus

1982-05-14

1984-08-07

Lacey, David L.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

422254, 156DIG103, 156DIG70, 148175, 118719, 118724, 118729, 118733, C30B 3500

Patent

active

044643420

ABSTRACT:
Molecular beam epitaxy apparatus that permits a cryo-panel on which high vapor pressure material has condensed to be removed from the growth chamber to an outgassing chamber permits the high vapor pressure material, such as phosphorus, to be easily used in growing compound semiconductor materials is described. The apparatus has an evacuable first chamber with a plurality of effusion ovens and an evacuable second chamber with a valve connecting the chambers. The apparatus further comprises apparatus for moving a cryo-panel between the first and second chambers and apparatus for heating the cryo-panel in the second chamber.

REFERENCES:
patent: 3213825 (1965-10-01), Copper et al.
patent: 4181544 (1980-01-01), Cho
patent: 4220488 (1980-09-01), Duchemin et al.
patent: 4330360 (1982-05-01), Kubiak et al.
patent: 4338883 (1982-07-01), Mahler
D. L. Smith and V. Y. Pickhardt, Molecular Beam Epitaxy of II-VI Compounds, Jun., 1975, Journal of Applied Physics, vol. 46, No. 6, pp. 2366-2374.

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