Process for making isolated semiconductor structure

Details Process for making isolated semiconductor structure Process for making isolated semiconductor structure

1986-10-02

1988-02-23

Ozaki, George T.

Fishing, trapping, and vermin destroying

H01L 21473

Patent

active

047270489

ABSTRACT:
An integrated circuit structure comprises a plurality of islands of semiconductor material (16-1 through 16-5) each island being separated from adjacent islands by a groove formed in annular shape around said island to laterally define the dimensions of each such island, an oxide (12, 14) formed over the surface of said grooves (13-1 through 13-6) and said islands and a selected glass (15) deposited on said oxide (14) in the grooves and over the top surface of said device, said glass having the property that it flows at a temperature beneath the temperature at which dopants in the islands of semiconductor material substantially redistribute, said selected glass (15) having a substantially flat top surface thereby to give said structure a substantially flat top surface.

REFERENCES:
patent: 4630343 (1986-12-01), Pierce et al.

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