Method of making a thin film transistor with laser recrystallize

Details Method of making a thin film transistor with laser recrystallize Method of making a thin film transistor with laser recrystallize

1986-09-29

1988-02-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 46, 437 82, 437100, 437101, 437 83, 437907, 357 237, 357 2, 357 4, H01L 21265, H01L 21263

Patent

active

047270446

ABSTRACT:
A method of manufacturing an insulated gate field effect transistor by forming a non-single crystalline semiconductor film of a first conductivity type on an insulating substrate where the semiconductor film includes hydrogen or fluoride, forming a gate insulating film on part of the semiconductor film to be the gate region, forming a gate electrode on the insulating film, inverting the conductivity type of the part of the conductor film to be the source and grain regions by ion doping of impurity corresponding to the second conductivity type opposite to the first conductivity type with the gate electrode functioning as a mask, and then exposing the non-single-crystalline semiconductor film to illumination with the gate electrode functioning as a mask to selectively crystallize the source and drain regions.

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