Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1985-08-22

1988-02-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 56, 437200, 437202, 437913, 437984, H01L 21283, H01L 21265

Patent

active

047270381

ABSTRACT:
A method of fabricating a MOS field effect semiconductor device having an LDD structure is described in which an insulating film is formed on a gate electrode and a layer of polycrystalline silicon, oxide, high melting point metal or a silicide of a high melting point metal is formed on a wafer and etched away by unisotropic RIE, except a portion thereof on a sidewall of the gate. With the resulting structure, degradation of the transconductance of the device due to injection of hot carriers is prevented. Also, the size of the device can be minimized without unduly increasing the resistances of the drain/source region, the gate electrode, and the contacts of the device.

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Tsang, "Fabrication of High-Performance LDDFET'S with Oxide Sidewall--Spacer Technology", IEEE Journal of Solid State Circuits, vol. Sc-17, No. 2, Apr. 82, pp. 220-226.

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