Semiconductor laser device having an oscillation wavelength in t

Details Semiconductor laser device having an oscillation wavelength in t Semiconductor laser device having an oscillation wavelength in t

1986-04-21

1988-07-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 357 61, H01S 319

Patent

active

047590246

ABSTRACT:
A semiconductor laser device comprises a superlatticed layer which is composed of alternate layers consisting of GAP thin layers and AlP thin layers. The superlatticed layer is formed as an active layer on a GaP substrate. The semiconductor laser device also is composed of two superlatticed cladding layers formed on either side of the active layer. The laser device of the present invention has an oscillation wavelength in the visible short-wavelength region.

REFERENCES:
patent: 4644553 (1987-02-01), Van Ruyven et al.

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