Process for making high performance CMOS and bipolar integrated

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 42, 357 91, 437 56, 437 69, 437162, H01L 2122, H01L 21225

Patent

active

047644800

ABSTRACT:
There is disclosed a high performance MOS transistor structure of either the N channel or P channel variety and a high performance bipolar transistor structure. A process is disclosed which can make high performance CMOS and high performance bipolar devices on the same die.

REFERENCES:
patent: 4375999 (1983-03-01), Nawata
patent: 4384301 (1983-05-01), Tasch, Jr. et al.
patent: 4445268 (1984-05-01), Hirao
patent: 4450620 (1984-05-01), Fuls et al.
patent: 4462149 (1984-07-01), Schwabe
patent: 4484388 (1984-11-01), Iwasaki
patent: 4507847 (1985-04-01), Sullivan
patent: 4519126 (1985-05-01), Hsu
patent: 4536945 (1985-08-01), Gray et al.
patent: 4569123 (1986-02-01), Ishii
Momose et al., IEEE-Trans. Electron Devices, vol. ED-32 (1985), 217.
Vora et al, Reprint of a Seminar Talk, Sep. 1984.
Basic I.C. Engineering, ed. Hamilton, D. J., McGraw-Hill, NY, 1975, pp. 198-207.
Microelectronics, ed. Millman, McGraw-Hill, N.Y., 1979, p. 104.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for making high performance CMOS and bipolar integrated does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for making high performance CMOS and bipolar integrated , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making high performance CMOS and bipolar integrated will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-600460

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.