Switch circuit for monolithic microwave integrated circuit devic

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Signal transmission integrity or spurious noise override

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Details

327388, 327389, 327427, 327434, 326 25, 326 33, 326 34, 330277, H03K 1716, H03K 17687, H03K 522, H03K 908

Patent

active

054594286

ABSTRACT:
Disclosed is a switch circuit which has a depletion mode n-channel MOSFET which can be used in a circuit allowing only a positive voltage to be supplied thereto, comprising a first D-FET having a gate for receiving an input signal, a drain for outputting an output signal and a source; a first resistor connected between the drain of the first D-FET and a positive voltage source to bias the drain of the first D-FET; a second D-FET having a gate connected to an intermittence controlling voltage source, a drain and a source connected to the positive voltage source and the source of the first D-FET 201, respectively; a second resistor connected between the gate of the second D-FET and a ground to bias the gate of the second D-FET; a constant-current source connected between each of the sources of the first and second D-FET and the ground; a bypass capacitor connected in parallel with the constant-current source and between the drain of the constant-current source and the ground to bypass an RF signal to the ground; and a third resistor connected between the gate of the first D-FET 201 and the ground to bias the gate of the first D-FET. Since the switch circuit can be operated only by a positive voltage without use of a negative voltage, it can be embodied with a general depletion mode n-channel MOSFET which can be fabricated by a relatively simple fabrication sequence and has a relatively simple structure in comparison with an enhancement mode n-channel MOSFET.

REFERENCES:
patent: 3789246 (1974-01-01), Preisig et al.
patent: 4734751 (1988-03-01), Hwang et al.
patent: 5338989 (1994-08-01), Tanino
patent: 5387880 (1995-02-01), Kobayashi

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