Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Patent
1995-05-12
1997-07-01
Karlsen, Ernest F.
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
324455, G01R 3102, G01N 2760
Patent
active
056442238
ABSTRACT:
A method for measuring the thickness of very thin oxide layers on a silicon substrate. A corona discharge source repetitively deposits a calibrated fixed charge density on the surface of the oxide. The resultant change in oxide surface potential for each charge deposition is measured. By choosing a starting value for an assumed oxide thickness, the approximate change in silicon bandbending per corona discharge step is determined. The cumulative changes in bandbending versus oxide surface potential yields an experimental bandbending versus bias characteristic. A theoretical bandbending versus bias characteristic is established. The experimental and theoretical characteristics are matched at the predetermined points thereof and then the assumed oxide thickness is iterated until both characteristics superimpose in the silicon accumulation region. The iterated oxide thickness that allows both characteristics to superimpose is the oxide thickness value being sought. The finally evolved experimental characteristic also is used to determine the interface states density of the oxide. Specially designed corona discharge guns are described for use with the oxide thickness and interface states density measurement techniques.
REFERENCES:
patent: 4144451 (1979-03-01), Kambara
patent: 4326165 (1982-04-01), Szedon
patent: 4663526 (1987-05-01), Kamieniecki
patent: 4780680 (1988-10-01), Reuter et al.
patent: 4812756 (1989-03-01), Curtis et al.
patent: 5051583 (1991-09-01), Mimura et al.
patent: 5216362 (1993-06-01), Verkuil
patent: 5266892 (1993-11-01), Kimura
patent: 5267555 (1993-12-01), Pajalich
patent: 5343293 (1994-08-01), Berger et al.
R. L. Verkuil, "Rapid Contactless Method for Measuring Fixed Oxide Charge Associated with Silicon Processing" IBM Technical Disclosure Bulletin, V. 24, No. 6, pp. 3048-3053, Nov. 1981.
M. S. Fung, et al, "Contactless Photovoltage vs Bias Method for Determining FLat-Band Voltage" IBM Technical Disclosure Bulletin, V.32, No.9A, pp. 14-17, Feb. 1990.
R. Hamers, et al, "High Spatial Resolution Measurement of Doping, Band-Bending, and Recombination at Semiconductor Surfaces" IBM Technical Disclosure Bulletin, V.33, No.1B, pp. 91-92, Jun. 1990.
International Business Machines - Corporation
Jones II Graham S.
Karlsen Ernest F.
Peterson Jr. Charles W.
LandOfFree
Uniform density charge deposit source does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Uniform density charge deposit source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Uniform density charge deposit source will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-600114