Semiconductor device having a p-type ohmic electrode structure

Details Semiconductor device having a p-type ohmic electrode structure Semiconductor device having a p-type ohmic electrode structure

1996-02-27

1997-07-01

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257201, 257614, 257741, H01L 310328, H01L 2922, H01L 2348, H01L 2352

Patent

active

056441657

ABSTRACT:
A p-type ohmic metal electrode for use with a group II-VI semiconductor device. The p-type ohmic metal electrode is made of a group II-IV p-type semiconductor layer having a group II element other than zinc dispersed in that layer disposed on the group II-IV semiconductor device, and a metal electrode layer disposed on the group II-IV semiconductor layer including the group II element other than zinc. Also disclosed is a group II-IV semiconductor device including a p-type group II-IV semiconductor containing zinc and selenium and the above ohmic metal electrode disposed on the group II-IV semiconductor device. Additionally, a group II-IV semiconductor device including a p-type group II-IV semiconductor containing zinc and selenium, a layer of a group II element other than zinc disposed on the group II-IV semiconductor device, and a metal electrode layer disposed on the layer of the group II element other than zinc is disclosed.

REFERENCES:
patent: 4629820 (1986-12-01), Basol et al.
patent: 4910154 (1990-03-01), Zanio et al.
patent: 5045897 (1991-09-01), Ahlgren
patent: 5187116 (1993-02-01), Kitigawa et al.
patent: 5215929 (1993-06-01), Okawa et al.
patent: 5293074 (1994-03-01), Taskar et al.
patent: 5294833 (1994-03-01), Schetzina
Applied Physics Letters, vol. 29, No. 7 (Oct. 1, 1976), New York, US, pp. 433-434; J.S. Best et al.: "HgSe, a Highly Electronegative Stable Metallic Contact for Semiconductor Devices".

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