Semiconductor memory device reducing hydrogen content

Details Semiconductor memory device reducing hydrogen content Semiconductor memory device reducing hydrogen content

1995-06-20

1997-07-01

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257295, 257296, 257310, H01L 213205

Patent

active

056441584

ABSTRACT:
A semiconductor device comprising: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer formed on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element formed on the first insulating layer, (d) a second insulating layer formed on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.

REFERENCES:
patent: 5316982 (1994-05-01), Taniguchi

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