Semiconductor device with reduced noise propagation between circ

Details Semiconductor device with reduced noise propagation between circ Semiconductor device with reduced noise propagation between circ

1994-05-03

1995-10-17

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

257369, 257371, H01L 23552, H01L 2976, H01L 2994

Patent

active

054593492

ABSTRACT:
A twin-well semiconductor device comprises a P-substrate having an inherent region including a separating zone and two pairs of an N-well and a P-well in the vicinity of the main surface of the P-substrate. An analog and a digital circuit block are formed on each one of the pairs of the N-well and the P-well. In the P-well of the analog circuit, a P+ diffused layer is formed between the boundary of the P-well and the analog circuit block, and is maintained at a ground potential. The P-type separating region is provided therein with an N-well in which an N+ diffused layer connected to Vdd line is formed. Due to the high equivalent resistance of the undoped separating zone of the semiconductor substrate separating the circuit blocks and the small junction capacitances formed between the separating zone and the N-well, noise propagating from the digital circuit block to the analog circuit block can be reduced.

Affiliated with

Also associated with

Rating

Semiconductor device with reduced noise propagation between circ does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with reduced noise propagation between circ, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with reduced noise propagation between circ will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-599589