Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1995-03-16
1997-07-01
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257152, 257153, H01L 2974, H01L 31111
Patent
active
056441509
ABSTRACT:
A double gate type insulated gate thyristor is provided which improves the breakdown withstand capability by turning on at low on-voltage by a thyristor operation mode and by turning off at high speed by an IGBT operation mode. In the insulated gate thyristor, a part of an n.sup.+ source region is removed and a p-base region is directly connected with a part of a cathode so as to connect a bipolar transistor with a main thyristor in parallel. A part of a switching-off current flows through the bipolar transistor to the cathode and the switching-off current which flows through a lateral MOSFET to the second gate electrode is reduced. By this configuration, the breakdown withstand capability is improved.
REFERENCES:
patent: 5397905 (1995-03-01), Otsuki et al.
"Dual Gate MOS Thyriston (DGMOT)"; Yasukazu Seki et al; 1993, IEEE, pp. 159-164.
IGBT Mode Turn-Off Thyristor (IGIT) Fabricated on SOI Subsrate by Tsuneo Ogura et al., 1993 IEEE, pp. 9.5.1-9.5.4.
Double Gate MOS Device Having IGBT and MCT Performances by Seiji Momota et al., 1992 International Symposium on Power Semiconductor Devices & ICs, Tokyo, pp. 28-33.
Dual Gate MOS Thyristor (DGMOT) by Yasukazu SEKI et al., 1993 IEEE, pp. 159-164.
Switching Behavior and Current Handling Performance of MCT-IGBT Cell Ensembles by H. Lendenmann et al., 1991 IEEE, pp. 6.3.1-6.3.4.
Fahmy Wael
Fuji Electric & Co., Ltd.
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