Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-03-31
1995-10-17
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 22, 257184, H01L 2714
Patent
active
054593328
ABSTRACT:
A semiconductor photodetector employs a multilayer structure for controlling speed, efficiency and noise. A light-absorbing low band gap semiconductor emitter layer produces photogenerated charge upon absorption of light. A semiconductor collector layer collects the photogenerated charge. A semiconductor barrier layer between the light absorbing layer and the collector layer selectively blocks substantially all but photogenerated charge. A base layer may be optionally employed between the barrier layer and the collector layer for gating the current flow and controlling wavelength sensitivity.
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Kalish Daniel
McDonnell Thomas E.
Mintel William
The United States of America as represented by the Secretary of
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