Method of analyzing semiconductor systems

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324158R, 324 73R, G01R 3128

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047587865

ABSTRACT:
A method of analyzing selected regions of semiconductor systems to determine the uniformity of distribution of trapped charges or electric dipoles at the surface of the semiconductor or in a dielectric or insulating material associated therewith, the method including the steps of applying an adjustable bias potential to the semiconductor system to produce an electric field within the system; directing a beam of electromagnetic radiation onto a selected region of the semiconductor system in which the electric field exists to induce a photocurrent output from the system, the beam including photons of energy greater than the band gap energy of the semiconductor; adjusting the bias potential to vary the direction and/or the magnitude of the electric field; measuring the photocurrent output induced by the beam as a function of the bias potential; and determining the uniformity of distribution of trapped charges or electric dipoles in the selected region of the semiconductor system from the measured photocurrent output. The measured current may be an alternating photocurrent produced by the additional step of modulating the intensity of the beam; in this case, either the amplitude or the phase (with respect to light intensity modulation) of the induced alternating photocurrent may be measured, as a function of the applied bias potential.

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