Method for manufacturing a semiconductor light emitting device

Details Method for manufacturing a semiconductor light emitting device Method for manufacturing a semiconductor light emitting device

1994-09-22

1995-10-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437979, 437906, 148DIG163, 148DIG99, H01L 2102

Patent

active

054591066

ABSTRACT:
An AlGaAs chip which has an n-type layer and a p-type layer is immersed in an aqueous solution containing 0.2-0.6 wt. % of ammonia and 25-35 wt. % of hydrogen peroxide to form a primary protective layer, and after drying the AlGaAs chip, the AlGaAs chip is for a second time immersed in an aqueous solution containing 0.2-0.6 wt. % of ammonia and 25-35 wt. % of hydrogen peroxide to form a secondary protective layer.

REFERENCES:
patent: 3855112 (1974-12-01), Tomozawa et al.
patent: 3914465 (1975-10-01), Dyment et al.
patent: 3935083 (1976-01-01), Tomozawa et al.
patent: 5262360 (1993-11-01), Holonyak et al.
Chemical Abstracts vol. 118, No. 8, item 69652, Feb. 22, 1993.

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