Method of manufacturing a semiconductor device having multilayer

Details Method of manufacturing a semiconductor device having multilayer Method of manufacturing a semiconductor device having multilayer

1994-04-05

1995-10-17

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437238, 437231, 437195, H01L 2131, H01L 21316, H01L 21473, H01L, H01L

Patent

active

054591058

ABSTRACT:
A method of manufacturing a semiconductor device having a flat surface and an interlayer insulating film having superior crack resistance comprises forming a first silicon oxide film having a superior crack resistance on a semiconductor substrate so as to cover the surface of a stepped pattern. A second silicon oxide film having a superior step coverage is deposited on the first silicon oxide film so as to fill the recessed portions of the stepped pattern and to cover the stepped pattern. The second silicon oxide film is etched to a prescribed thickness. A third silicon oxide film superior in filling of recesses is placed into the recessed portions existing on the surface of the second silicon oxide film after its etching. A fourth silicon oxide film is formed on the semiconductor substrate including the second silicon oxide film and third silicon oxide film.

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