Method of making defect free silicon islands using SEG

Details Method of making defect free silicon islands using SEG Method of making defect free silicon islands using SEG

1987-10-23

1988-07-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 67, 437103, 437239, 148DIG26, 148DIG29, 148DIG97, 156610, 156613, 156612, 156644, H01L 21205, H01L 2176

Patent

active

047585315

ABSTRACT:
A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.

REFERENCES:
patent: 4349394 (1982-09-01), Wei
patent: 4497683 (1985-02-01), Celler et al.
patent: 4547231 (1985-10-01), Hine
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4579621 (1986-04-01), Hine
patent: 4637127 (1987-01-01), Kurogi et al.
Tanno et al., "Selective Silicon Epitaxy Using Reduced Pressure Technique", Jap. J. Appl. Phys. vol. 21, No. 9, Sep., 1982, pp. L564-L566.
Ishitani et al., "Facet Formation in Selective Silican Epitaxial Growth", Jap. J. Appl. Phys., vol. 24, No. 10, Oct. 1985, pp. 1267-1269.
Liaw et al., "Epitaxial Silicon for Bipolar Integrated Circuits", Solid State Technology, May, 1984, pp. 135-143.
Borland et al., "Advanced Dielectric Isolation Through Selective Epitaxial Growth Techniques", Solid State Technology, Aug., 1985, pp. 141-148.
Endo et al., "Novel Device Isolation Technology with Selective Epitaxial Growth", IEEE Trans Elect. Devices, vol. ED-31, No. 9, Sep., 1984, pp. 1283-1288.

Affiliated with

Also associated with

Rating

Method of making defect free silicon islands using SEG does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making defect free silicon islands using SEG, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making defect free silicon islands using SEG will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-597145