Method for selectively growing aluminum-containing layers

Details Method for selectively growing aluminum-containing layers Method for selectively growing aluminum-containing layers

1993-10-07

1995-10-17

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

117104, 117 90, 117 95, 117954, H01L 2120

Patent

active

054590973

ABSTRACT:
In accordance with the invention, aluminum-containing layers are grown by molecular beam processes using as an arsenic precursor phenylarsine (PhAs). Because PhAs is more reactive than arsine and less reactive than arsenic, it decomposes selectively on III-V surfaces but not on mask materials. Thus in contrast to conventional processes, growth using PhAs permits selective growth on unmasked gallium arsenide surfaces but inhibits growth on typical mask materials such as silicon nitride.

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