Fishing – trapping – and vermin destroying
Patent
1995-05-25
1997-07-01
Graybill, David E.
Fishing, trapping, and vermin destroying
437211, 437238, 437241, 437245, H01L 2148, H01L 2156, H01L 2158, H01L 2160
Patent
active
056438346
ABSTRACT:
A process for manufacturing a plastic package type semiconductor device composed of a rolled metal substrate made of copper or copper alloy and an insulating film formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element is mounted on the film or on the exposed surface of the substrate. Other passive elements are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding. This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.
REFERENCES:
patent: 3925804 (1975-12-01), Cricchi et al.
patent: 4104697 (1978-08-01), Kendall et al.
patent: 4151543 (1979-04-01), Hayakawa et al.
patent: 4172261 (1979-10-01), Tsuzuki et al.
patent: 4561010 (1985-12-01), Ogihara et al.
patent: 4639760 (1987-01-01), Granberg et al.
patent: 4686559 (1987-08-01), Haskell
patent: 4717681 (1988-01-01), Curran
patent: 4873559 (1989-10-01), Shimizu et al.
patent: 4947234 (1990-08-01), Einsinger et al.
patent: 5103283 (1992-04-01), Hite
patent: 5164339 (1992-11-01), Gimdelson
patent: 5244839 (1993-09-01), Baker et al.
Ban Shunsuke
Harada Keizo
Maeda Takao
Takikawa Takatoshi
Yamanaka Shosaku
Graybill David E.
Sumitomo Electric Industries Ltd.
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