Method for manufacturing a semiconductor element utilizing therm

Details Method for manufacturing a semiconductor element utilizing therm Method for manufacturing a semiconductor element utilizing therm

1978-12-04

1980-11-18

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29576B, 29584, 148175, 148187, 357 29, 357 34, 357 38, 357 39, 357 64, 357 91, H01L 21263

Patent

active

042343550

ABSTRACT:
In a known process for manufacturing a semiconductor element, a single crystal semiconductor body is subjected to at least one high temperature treatment such as diffusion or epitaxy in order to create a pn junction. A metallization is then applied to the upper surface of the semiconductor to constitute an electrode. Thereafter the element is subjected to an annealing process at intermediate temperatures. In accordance with the invention, a semiconductor body is irradiated following the manufacture of the pn junctions and prior to the metallization. The radiation causes lattice displacements which in turn decrease the lifetime of the minority carriers. The above-mentioned annealing process then also serves partially to heal the lattice displacements caused by the radiation.

REFERENCES:
patent: 3067485 (1962-12-01), Ciccolella et al.
patent: 3532910 (1970-10-01), Lee et al.
patent: 3691376 (1972-09-01), Bauerlein et al.
patent: 3809582 (1974-05-01), Tarneja et al.
patent: 3864174 (1975-02-01), Akiyama et al.
patent: 3880676 (1975-04-01), Douglas et al.
patent: 3888701 (1975-06-01), Tarneja et al.
patent: 3988172 (1976-10-01), Bachmann et al.
patent: 4056408 (1977-11-01), Bartko et al.
patent: 4080721 (1978-03-01), Hung
patent: 4106954 (1978-08-01), Brebisson et al.
patent: 4137099 (1979-01-01), Sun
Lederhandler et al., "Measurement of Minority Carrier . . . " Proc. I.R.E., vol. 43, 1955, pp. 477-484.
Van Lint et al., "Correlation of Displacement . . . Neutrons in Silicon" IEEE Trans. on Nuclear Science, vol. NS22, No. 6, 1975, pp. 2663-2668.
Runge, H., "Threshold Voltage Shift . . . by Ion Implantation" Electronic Engineering, Jan. 1976, pp. 41-43.
Komaleeva et al. "Influence of Heat Treatment . . . in Silicon" Sov. Phys. Semicond, vol. 10, No. 2, Feb. 1976, pp. 191-192.
Rai-Choudhury et al., "Electron Irradiation . . . Lifetime Control" IEEE Trans. on Electron Dev., vol. Ed-23, No. 8, Aug. 1976, pp. 814-818.

Affiliated with

Also associated with

Rating

Method for manufacturing a semiconductor element utilizing therm does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor element utilizing therm, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor element utilizing therm will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-596355