Planar avalanche diode with a breakdown voltage between 4 and 8

Details Planar avalanche diode with a breakdown voltage between 4 and 8 Planar avalanche diode with a breakdown voltage between 4 and 8

1980-04-15

1982-04-06

Rosenberger, R. A.

H01L 2990

Patent

active

043239099

ABSTRACT:
A diode comprising a N-type substrate in which is formed a P-type guard ring and a central diffusion of the same type but of reduced depth. Part of the central diffusion layer is interrupted by a masking island. Diffusion is for example obtained from an epitaxial layer.

REFERENCES:
patent: 3391287 (1968-07-01), Kao et al.
patent: 4030117 (1977-06-01), Kling
patent: 4129878 (1978-12-01), Webb
Keil et al., "Low-Noise Silicon Planar Detectors for Room Temperature Application", Nuclear Instruments and Methods, vol. 104, No. 1, (1972), pp. 209-214, 357-352.
IEEE Transactions on Electron Devices, vol. Ed-23, May 1976, No. 5, (New York).
R. B. Fair et al.: "Zener and avalanche breakdown in As-implanted low-voltage Si n-p junctions", pp. 512-518.

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