Gate array base cell

Details Gate array base cell Gate array base cell

1995-06-07

1996-10-08

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

257202, 257204, 257401, H01L 2702

Patent

active

055634303

ABSTRACT:
A gate array base cell which can easily be configured as high conductivity transistor device or a low conductivity transistor device comprises a moat region of first conductivity type, typically heavily doped n-type silicon or heavily doped p-type silicon, for example. A channel region of a different conductivity type separates the moat region into at least three portions. An insulating layer, such as silicon dioxide, for example, and a gate are formed above the channel region. The gate may be formed of polysilicon, for example. Modifications, variations, circuit configurations and an illustrative fabrication method are also disclosed.

REFERENCES:
patent: 5055716 (1991-10-01), El Gamel
patent: 5283457 (1994-02-01), Matloubian
patent: 5289021 (1994-02-01), El Gamel
patent: 5331192 (1994-07-01), Kudoh

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