Processing apparatus using fast atom beam

Details Processing apparatus using fast atom beam Processing apparatus using fast atom beam

1994-07-05

1996-10-08

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

250251, 1566431, H05H 300

Patent

active

055634168

ABSTRACT:
A processing apparatus using a fast atom beam which has at least one source selected from among a light energy source, a laser beam source, a radical source, an electron beam source, an X-ray or radiation (alpha rays, beta rays, or gamma rays) source, and an ion source, in addition to the fast atom beam source, so that an object to be processed which is disposed in a vacuum container or outside a vacuum is irradiated with a fast atom beam in combination with at least one selected from among the light energy, laser beam, electron beam, X-rays or radiation, radical particles and ion beam, to thereby increase processing speed.

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Thin Solid Films, vol. 202, No. 2, 30 Jul. 1991, Lausanne CH pp. 315-320, Xi Wang et al. "Synthesis of Titanium Nitride Films By Ion-Beam-Enhanced-Deposition".
Journal of Vacuum Science and Technology: Part B, vol. 9, No. 2/1, Mar. 1991, New York, U.S., pp. 197-207, Winters et al., "Etching Reactions for Silicon with Fatoms: Product Distributions and Ion Enhancement Mechanisms".
J. Appl. Phys, Sep. 1989, Shimokawa et al., 66:2613-2618, Reactive-fast-atom beam etching GaAs using Cl.sub.2 gas.

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