Full frame CCD image sensor with altered accumulation potential

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Patent

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Details

Other Related Categories

257225, 348311, H01L 29765

Type

Patent

Status

active

Patent number

055634044

Description

ABSTRACT:
In accordance with the invention, a full frame solid-state image sensor with altered accumulation potential comprises a substrate that includes a semiconductor of one conductivity type and has a surface at which is situated a photodetector that comprises a first storage area and a second storage area. The first and second storage areas each comprise a CCD channel of conductivity type opposite to the conductivity type of the semiconductor, and the channel comprises an uppermost region of opposite conductivity type to the remainder of the CCD channel. A first barrier region separates the first storage area from the second storage area, and a second barrier region separates the second storage area from an adjacent photodetector; the second barrier region is shallower than the first barrier region. Adjacent to one side of the photodetector is a channel stop of the same conductivity type as the semiconductor. A first and a second gate each comprising a conductive layer overlie the CCD channel, and a dielectric is interposed between the conductive layer and the CCD channel. In the method of the invention, the uppermost region of the CCD channel is doped with a dopant of conductivity opposite to the conductivity of the CCD channel, thereby lowering the accumulation potential.

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