Schottky diode-diode field effect transistor logic

Details Schottky diode-diode field effect transistor logic Schottky diode-diode field effect transistor logic

1980-12-10

1983-09-20

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307450, 307475, H03K 19094, H03K 1912, H03K 1920, H03K 19017

Patent

active

044058705

ABSTRACT:
Disclosed is a logic circuit with a plurality of AND logic elements, each including a plurality of Schottky diodes with each cathode connected to a logic input and the anodes connected in common to establish an AND output. A diode pull up FET is provided for each AND output, with the source connected to the AND output, the gate connected to the source, and the drain connected to a source of positive bias potential. An OR logic element includes a plurality of Schottky diodes with each anode connected to one of the AND outputs and the cathodes connected in common to establish an OR output, while a diode pull down FET has its drain connected to the OR output, with the gate connected to the source and the source connected to a source of negative bias potential. A level shifting diode is placed between the OR output and the pull down FET. An output FET is connected through its gate to the drain of the diode pull down FET, with the source connected to ground and the drain providing a logic output from the circuit. An output pull up FET has its source connected to the drain of the output FET, the gate connected to the source, and the drain connected to the source of positive bias potential.

REFERENCES:
patent: 3250917 (1966-05-01), Hofstein
patent: 3299291 (1967-01-01), Warner, Jr. et al.
patent: 3363111 (1968-01-01), Moreines
patent: 3515899 (1970-06-01), May
patent: 3969632 (1976-07-01), Bobenrieth
patent: 4013896 (1977-03-01), Picquendar et al.
patent: 4028556 (1977-06-01), Cachier et al.
patent: 4038563 (1977-07-01), Zuleeg et al.
patent: 4160918 (1979-07-01), Nazarian et al.
patent: 4177390 (1979-12-01), Cappon
Nuzillat et al., "Low Pinch-Off Voltage FET Logic (l.p.f.l.): L.S.I. Oriented Logic Approach Using Quasinormally Off MESFETs", IEEE Proc., vol. 127, Pt. 1, No. 5, pp. 287-296, 10/80.
Dreyfack, "Gallium Arsenide to Yield 5-GHz Divider", Electronics (pub.); pp. 76 & 78; 10/9/80.
Liechti, "GaAs FET Logic", Inst. Phys. Conf. Ser. No. 33a (c) 1977; Chapt. 5, Conf. Proc. of the 6th Intl. Symp. on GaAs & Related Compounds; Edinburgh, Scotland; 20-22, Sep. 1976.
Suzuki et al., "Logic Circuits with 2 .mu.m Gate Schottky Barrier FETs"; Proc. of 6th Conf. on Solid State Devices, Tokyo, Jap., 1974; pp. 219-224.
Eden et al., Low Power Depletion Mode Ion-Implanted GaAs FET Integrated Circuits, IEEE Trans. Elect. Dev., vol. ED-24, p. 1209 (1977).
Eden et al., Low Power GaAs Digital ICs Using Schottky Diode-FET Logic, 1978 IEEE Int. Solid State Circ. Conf., Dig. of Tech. Papers, p. 68 (1978).
Eden et al., The Prospects for Ultrahigh-Speed VLSI GaAs Digital Logic, IEEE Trans. Elec. Dev., vol. ED-26, p. 299 (1979).
Eden et al., Planar GaAs IC Technology: Applications for Digital LSI, IEEE J. Sol. State Cir., vol. SC-13, p. 419 (1978).
Ishikawa et al., Normally-Off Type GaAs MESFET for Low Power, High Speed Logic Circuits, 1977 IEEE Sol. State Circ. Conf., Dig. of Tech. Papers, p. 200, (1977).
Schottky-Diode/FET Logic Bring VLSI into the Real World, Electronic Design, vol. 5, p. 19 (Mar. 1, 1978).
Van Tuyl et al., High-Speed Integrated Logic with GaAs MESFETs, IEEE J. Sol. State Cir., vol. SC-9, p. 269 (1974).
Washburn, An Application of Boolean Algebra to the Design of Electronic Switching Circuits, AIEE Trans. Comm. & Elec., vol. 72, p. 380 (1953).
Zuleeg et al., Femtojoule High-Speed Planar GaAs E-JFET Logic, IEEE Trans. Elec. Dev., vol. ED-25, p. 628 (1978).

Affiliated with

Also associated with

Rating

Schottky diode-diode field effect transistor logic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schottky diode-diode field effect transistor logic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky diode-diode field effect transistor logic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-589950