Metal oxide semiconductor gated turn off thyristor including a s

Details Metal oxide semiconductor gated turn off thyristor including a s Metal oxide semiconductor gated turn off thyristor including a s

1987-10-29

1989-05-02

Clawson, Jr., Joseph E.

357 13, 357 15, 357 234, 357 43, 357 55, 357 86, H01L 2974

Patent

active

048273210

ABSTRACT:
An MOS gate turn-off thyristor structure includes non-regenerative (three-semiconductor-layer) portions interspersed with four-semiconductor-layer regenerative (thyristor) portions, gate electrode segments disposed adjacent to relatively narrow portions of the base region within the regenerative portion, and either ohmic contacts or Schottky barrier contacts to the non-regenerative portions. Upon application of an appropriate turn-off gate bias to the gate electrode segments, the base region of the regenerative portion in which they are disposed is pinched off and the current flowing therethrough is derived to flow through the non-regenerative portion of the structure. This interrupts regeneration in the regenerative structure and the device turns off. Upon application of a high voltage of one polarity across a device of this type which includes the Schottky barrier contacts, the Schottky barrier maintains the same high stand-off voltage in the non-regenerative portion as the regenerative portion can hold off, thereby enabling the device to hold off high voltages of either polarity.

REFERENCES:
patent: 3891866 (1975-06-01), Okuhara et al.
patent: 4137545 (1979-01-01), Becke
patent: 4618872 (1986-10-01), Bauga
patent: 4641162 (1987-02-01), Yilmaz
patent: 4641174 (1987-02-01), Baliga

Affiliated with

Also associated with

Rating

Metal oxide semiconductor gated turn off thyristor including a s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal oxide semiconductor gated turn off thyristor including a s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide semiconductor gated turn off thyristor including a s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-588967