Total reflection X-ray diffraction micrographic method and appar

X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis

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378 83, 378 84, G01N 23207

Patent

active

053533240

ABSTRACT:
A method for detecting and evaluating crystal defects existing in the extreme neighborhood of the surface of a crystal specimen through the use of X-ray analyzing micrography. Synchrotron radiation is used as the X-ray source. A monochromatic X-ray beam generated from the synchrotron radiation is directed into the crystal specimen at a glancing angle smaller than the critical angle of said crystal specimen relative to said monochromatic X-ray beam. The diffracted X-rays from the crystal specimen due to asymmetrical reflection are detected in order to observe the resulting diffracted image.

REFERENCES:
patent: 3051834 (1962-08-01), Shimula et al.
patent: 4928294 (1990-05-01), Beard, Jr. et al.
"Theoretical Considerations on Bragg-Case Diffraction of X-rays at a Small Glancing Angle" (Seigo Kishino and Kazutake Kohra, Japanese Journal of Applied Physics, vol. 10, No. 5, pp. 551-557 (1971).
"On X-Ray Diffraction in an Extremely Asymmetric Case" (T. Bedynska, Phys. stat. sol. (a), 19, pp. 365-372 (1973)).
"On the Deviation from the Bragg Law and the Widths of Diffraction Patterns in Perfect Crystals" (F. Rustichelli, Philosophical Magazine, vol. 31, pp. 1-12 (1974 and 1975)).
"A Modified Dynamical Theory (MDT) of X-Ray Diffraction in Extremely Asymmetric Schemes" (A. M. Afansev and O. G. Melikyan, PHys. stat. sol. (a), 122, (1990)) pp. 459-468.

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