Patent
1987-09-17
1991-01-15
Hille, Rolf
357 67, 357 68, H01L 2348, H01L 2946, H01L 2954
Patent
active
049857509
ABSTRACT:
A semiconductor device comprises a silicon substrate, an insulating film in which a contact hole is formed, a metallic layer deposited on said silicon substrate through the contact hole, for forming an ohmic contact to the silicon substrate, a barrier layer deposited on the metallic layer, for preventing reaction and interdiffusion between copper and silicon, and a metallization film including at least copper deposited on the barrier layer.
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Patent Abstracts of Japan, vol. 9, No. 75 (E-306 [1798], 4th Apr. 1985; & JP-A-59 210 656 (Fujitsu K.K.) 29-11-84.
IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, pp. 1395, 1396, New York, US; "Diffusion Barriers for CU".
IBM Technical Disclosure Bulletin, vol. 25, No. 2, Jul. 1982, pp. 591-592, New York, US; R. C. Lange et al.: "Process for Forming a Contact Hole Stud".
Fujitsu Limited
Hille Rolf
Limanek Robert P.
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